IXTH160N10T データシート

Name: IXTH160N10T
Brand: IXYS
SKU: 190051982-0000-0000-0000

IXTH160N10T - IXYS の商品詳細ページです。

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IXTH160N10T の詳細情報

型番	IXTH160N10T
メーカー	IXYS
データシート
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	500 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V
Drain Current-Max (Abs) (ID)	160 A
Drain Current-Max (ID)	160 A
Drain-source On Resistance-Max	0.007 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	135 pF
JEDEC-95 Code	TO-247AD
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 Cel
Operating Temperature-Min	-55 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	430 W
Pulsed Drain Current-Max (IDM)	430 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Powers
Surface Mount	NO
Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING
Transistor Element Material	SILICON