IXTA5N50P データシート

Name: IXTA5N50P
Brand: IXYS
SKU: 190051908-0000-0000-0000

IXTA5N50P - IXYS の商品詳細ページです。

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IXTA5N50P の詳細情報

型番	IXTA5N50P
メーカー	IXYS
データシート
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	250 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V
Drain Current-Max (Abs) (ID)	5 A
Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	1.4 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AA
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	89 W
Pulsed Drain Current-Max (IDM)	10 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING
Transistor Element Material	SILICON