IXSN35N100U1 データシート Ixys

IXSN35N100U1 - IXYS の商品詳細ページです。

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IXSN35N100U1 の詳細情報

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型番IXSN35N100U1
メーカーIXYS
データシートProduct_list_pdf
Case Connection ISOLATED
Collector Current-Max (IC) 34 A
Collector-emitter Voltage-Max 1000 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 8 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 205 W
Power Dissipation-Max (Abs) 205 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 2800 ns
Turn-on Time-Nom (ton) 230 ns
VCEsat-Max 3.5 V
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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