IXGN50N60BD2 データシート Ixys

IXGN50N60BD2 - IXYS の商品詳細ページです。

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IXGN50N60BD2 の詳細情報

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型番IXGN50N60BD2
メーカーIXYS
データシートProduct_list_pdf
Additional Feature FAST
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 50 ns
VCEsat-Max 2.5 V
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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