| 型番 | IXGM30N50A |
|---|---|
| メーカー | IXYS |
| Collector Current-Max (IC) | 50 A |
| Collector-emitter Voltage-Max | 500 V |
| Fall Time-Max (tf) | 500 ns |
| Gate-emitter Thr Voltage-Max | 5 V |
| Gate-emitter Voltage-Max | 30 V |
| JESD-609 Code | e0 |
| Operating Temperature-Max | 150 Cel |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200 W |
| Rise Time-Max (tr) | 200 ns |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| 会社名称 | IXYS Corporation |
|---|---|
| 設立 | 1983 |
| 所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
| URL | http://www.ixys.com/ |
IXGM30N50A - IXYS の商品詳細ページです。