IXGH30N60BD1 データシート Ixys

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IXGH30N60BD1 の詳細情報

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型番IXGH30N60BD1
メーカーIXYS
データシートProduct_list_pdf
Additional Feature FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 190 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 25 ns
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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