203時間5分後
以内に見積もり依頼を頂ければ、
05月08日(水) 9:00
までに見積もり回答いたします。
型番 | IXGB75N60BD1 |
---|---|
メーカー | IXYS |
データシート | |
Case Connection | COLLECTOR |
Collector Current-Max (IC) | 75 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Gate-emitter Thr Voltage-Max | 5.5 V |
Gate-emitter Voltage-Max | 20 V |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 360 W |
Qualification Status | Not Qualified |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 600 ns |
Turn-on Time-Nom (ton) | 133 ns |
会社名称 | IXYS Corporation |
---|---|
設立 | 1983 |
所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
URL | http://www.ixys.com/ |
IXGB75N60BD1 - IXYS の商品詳細ページです。