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型番 | IXFX210N17T |
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メーカー | IXYS |
データシート | |
Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 2000 mJ |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 170 V |
Drain Current-Max (Abs) (ID) | 210 A |
Drain Current-Max (ID) | 210 A |
Drain-source On Resistance-Max | 0.0075 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSIP-T3 |
JESD-609 Code | e1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 1150 W |
Pulsed Drain Current-Max (IDM) | 580 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | IXYS Corporation |
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設立 | 1983 |
所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
URL | http://www.ixys.com/ |
IXFX210N17T - IXYS の商品詳細ページです。