IXFX120N30T データシート

Name: IXFX120N30T
Brand: IXYS
SKU: 190080453-0000-0000-0000

IXFX120N30T - IXYS の商品詳細ページです。

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IXFX120N30T の詳細情報

型番	IXFX120N30T
メーカー	IXYS
データシート
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	2500 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	300 V
Drain Current-Max (Abs) (ID)	120 A
Drain Current-Max (ID)	120 A
Drain-source On Resistance-Max	0.024 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	135 pF
JESD-30 Code	R-PSIP-T3
JESD-609 Code	e1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Operating Temperature-Min	-55 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	IN-LINE Meter
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	960 W
Pulsed Drain Current-Max (IDM)	330 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	TIN SILVER COPPER
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON