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型番 | IXFT16N120P |
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メーカー | IXYS |
Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 800 mJ |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1200 V |
Drain Current-Max (Abs) (ID) | 16 A |
Drain Current-Max (ID) | 16 A |
Drain-source On Resistance-Max | 0.95 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-268AA |
JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 660 W |
Pulsed Drain Current-Max (IDM) | 35 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | IXYS Corporation |
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設立 | 1983 |
所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
URL | http://www.ixys.com/ |
IXFT16N120P - IXYS の商品詳細ページです。