IXFN32N120P Ixys

IXFN32N120P - IXYS の商品詳細ページです。

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IXFN32N120P の詳細情報

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型番IXFN32N120P
メーカーIXYS
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 32 A
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.31 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1000 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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