| 型番 | DE-375 102N12A |
|---|---|
| メーカー | IXYS |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1000 V |
| Drain Current-Max (ID) | 12 A |
| Drain-source On Resistance-Max | 1.05 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25 pF |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDFP-F6 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLATPACK Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 72 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | IXYS Corporation |
|---|---|
| 設立 | 1983 |
| 所在地 | 1590 Buckeye Drive Milpitas, CA 95035 |
| URL | http://www.ixys.com/ |
DE-375 102N12A - IXYS の商品詳細ページです。