DE275-102N06A Ixys

DE275-102N06A - IXYS の商品詳細ページです。

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DE275-102N06A の詳細情報

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型番DE275-102N06A
メーカーIXYS
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称IXYS Corporation
設立1983
所在地1590 Buckeye Drive Milpitas, CA 95035
URLhttp://www.ixys.com/

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