| 型番 | IS61LPS25636A-200B2I |
|---|---|
| メーカー | ISSI |
| データシート | ![]() |
| Access Time-Max | 3.1 ns |
| Additional Feature | PIPELINED ARCHITECTURE |
| Clock Frequency-Max (fCLK) | 200 MHz |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B119 |
| JESD-609 Code | e0 |
| Length | 22 mm |
| Memory Density | 9437184 bit |
| Memory IC Type | CACHE SRAM |
| Memory Width | 36 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Terminals | 119 |
| Number of Words | 262144 words |
| Number of Words Code | 256K |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 256KX36 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | BGA |
| Package Equivalence Code | BGA119,7X17,50 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY Meter |
| Parallel/Serial | PARALLEL |
| Power Supplies | 2.5/3.3,3.3 V |
| Qualification Status | Not Qualified |
| Seated Height-Max | 2.41 mm |
| Standby Current-Max | 0.105 Amp |
| Standby Voltage-Min | 3.14 V |
| Sub Category | SRAMs |
| Supply Current-Max | 0.275 mA |
| Supply Voltage-Max (Vsup) | 3.465 V |
| Supply Voltage-Min (Vsup) | 3.135 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 1.27 mm |
| Terminal Position | BOTTOM |
| Width | 14 mm |
| 会社名称 | Integrated Silicon Solution, Inc. |
|---|---|
| 設立 | 1988 |
| 所在地 | 1623 Buckeye Dr.Milpitas, California 95035 |
| URL | http://www.issi.com/ |
IS61LPS25636A-200B2I - ISSI の商品詳細ページです。