| 型番 | IS42S16100E-5T |
|---|---|
| メーカー | ISSI |
| Access Mode | DUAL BANK PAGE BURST |
| Access Time-Max | 5 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 200 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 1,2,4,8 |
| JESD-30 Code | R-PDSO-G50 |
| JESD-609 Code | e0 |
| Length | 20.95 mm |
| Memory Density | 16777216 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 50 |
| Number of Words | 1048576 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0 Cel |
| Organization | 1MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP2 |
| Package Equivalence Code | TSOP50,.46,32 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 3.3 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 2048 |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max | 0.002 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.17 mA |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.8 mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Width | 10.16 mm |
| 会社名称 | Integrated Silicon Solution, Inc. |
|---|---|
| 設立 | 1988 |
| 所在地 | 1623 Buckeye Dr.Milpitas, California 95035 |
| URL | http://www.issi.com/ |
IS42S16100E-5T - ISSI の商品詳細ページです。