| 型番 | IS42S16100C1-7BI |
|---|---|
| メーカー | ISSI |
| Access Mode | DUAL BANK PAGE BURST |
| Access Time-Max | 5.5 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 143 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 1,2,4,8 |
| JESD-30 Code | R-PBGA-B60 |
| JESD-609 Code | e0 |
| Length | 10.1 mm |
| Memory Density | 16777216 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 60 |
| Number of Words | 1048576 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 1MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA60,7X15,25 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH Meter |
| Power Supplies | 3.3 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 4096 |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max | 0.003 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.14 mA |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 0.65 mm |
| Terminal Position | BOTTOM |
| Width | 6.4 mm |
| 会社名称 | Integrated Silicon Solution, Inc. |
|---|---|
| 設立 | 1988 |
| 所在地 | 1623 Buckeye Dr.Milpitas, California 95035 |
| URL | http://www.issi.com/ |
IS42S16100C1-7BI - ISSI の商品詳細ページです。