IS25LP512M-RHLE Issi

IS25LP512M-RHLE - ISSI の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IS25LP512M-RHLE の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IS25LP512M-RHLE
メーカーISSI
Alternate Memory Width 1
Clock Frequency-Max (MHz) 133
Clock Frequency-Max (fCLK) 133 MHz
Data Retention Time-Min 20
Endurance (Write/Erase Cycles) 100000
J-STD-609 Code e1
JESD-30 Code R-PBGA-B24
Length 8 mm
Length (mm) 8
Memory Density 536870912 bit
Memory Density (bits) 536870912
Memory IC Type FLASH
Memory Organization 64MX8
Memory Width 8
Number of Functions 1
Number of Terminals 24
Number of Words 67108864 words
Number of Words (words) 67108864
Number of Words Code 64M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 Cel
Operating Temperature-Max (Cel) 105
Operating Temperature-Min -40 Cel
Operating Temperature-Min (Cel) -40
Organization 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA24,5X5,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE Meter
Parallel/Serial SERIAL
Peak Reflow Temperature (Cel) 260
Programming Voltage 3 V
Programming Voltage (V) 3
Seated Height-Max 1.2 mm
Seated Height-Max (mm) 1.2
Serial Bus Type SPI
Standby Current-Max (A) 0.00014
Supply Current-Max (mA) 35
Supply Voltage-Max (V) 3.6
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (V) 2.3
Supply Voltage-Min (Vsup) 2.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
会社名称Integrated Silicon Solution, Inc.
設立1988
所在地1623 Buckeye Dr.Milpitas, California 95035
URLhttp://www.issi.com/

IS25LP512M-RHLEのレビュー

IS25LP512M-RHLE のご注文について