JANTXV2N6786 データシート Ir

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JANTXV2N6786 の詳細情報

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型番JANTXV2N6786
メーカーIR
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 0.82 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (Abs) (ID) 1.2 A
Drain Current-Max (ID) 1.25 A
Drain-source On Resistance-Max 3.6 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 5.5 A
Qualification Status Not Qualified
Reference Standard MIL-19500/556
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 65 ns
Turn-on Time-Max (ton) 35 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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