JANTXV2N6784U データシート Ir

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JANTXV2N6784U の詳細情報

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型番JANTXV2N6784U
メーカーIR
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 20 mJ
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (Abs) (ID) 2.25 A
Drain Current-Max (ID) 2.25 A
Drain-source On Resistance-Max 1.725 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
JESD-609 Code e0
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 9 A
Qualification Status Not Qualified
Reference Standard MIL-19500/556
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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