型番 | JANTXV2N6784 |
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メーカー | IR |
データシート | ![]() |
Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 20 mJ |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 2.25 A |
Drain Current-Max (ID) | 2.25 A |
Drain-source On Resistance-Max | 1.5 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 25 pF |
JEDEC-95 Code | TO-39 |
JESD-30 Code | O-MBCY-W3 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 15 W |
Power Dissipation-Max (Abs) | 15 W |
Pulsed Drain Current-Max (IDM) | 9 A |
Qualification Status | Not Qualified |
Reference Standard | MIL-19500/556 |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | TIN LEAD |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 50 ns |
Turn-on Time-Max (ton) | 35 ns |
会社名称 | International Rectifier |
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設立 | 1947 |
所在地 | 233 Kansas St., El Segundo, California 90245,USA |
URL | http://www.irf.com/ |
JANTXV2N6784 - IR の商品詳細ページです。