| 型番 | JANTXV2N6782 |
|---|---|
| メーカー | IR |
| データシート | ![]() |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 7 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (Abs) (ID) | 3.5 A |
| Drain Current-Max (ID) | 3.5 A |
| Drain-source On Resistance-Max | 0.6 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25 pF |
| JEDEC-95 Code | TO-39 |
| JESD-30 Code | O-MBCY-W3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 15 W |
| Power Dissipation-Max (Abs) | 15 W |
| Pulsed Drain Current-Max (IDM) | 14 A |
| Qualification Status | Not Qualified |
| Reference Standard | MIL-19500 |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 45 ns |
| Turn-on Time-Max (ton) | 40 ns |
| 会社名称 | International Rectifier |
|---|---|
| 設立 | 1947 |
| 所在地 | 233 Kansas St., El Segundo, California 90245,USA |
| URL | http://www.irf.com/ |
JANTXV2N6782 - IR の商品詳細ページです。