JANSR2N7488T3 データシート Ir

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JANSR2N7488T3 の詳細情報

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型番JANSR2N7488T3
メーカーIR
データシートProduct_list_pdf
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 130 V
Drain Current-Max (Abs) (ID) 18 A
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.09 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AA
JESD-30 Code S-XSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Reference Standard MIL-19500/705
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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