JANSR2N7269 Ir

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JANSR2N7269 の詳細情報

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型番JANSR2N7269
メーカーIR
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (Abs) (ID) 26 A
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.1 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 104 A
Qualification Status Not Qualified
Reference Standard MIL-19500/603
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 280 ns
Turn-on Time-Max (ton) 173 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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