| 型番 | IRLMS4502TR |
|---|---|
| メーカー | IR |
| データシート | ![]() |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 28 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 12 V |
| Drain Current-Max (ID) | 5.5 A |
| Drain-source On Resistance-Max | 0.042 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 44 A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | International Rectifier |
|---|---|
| 設立 | 1947 |
| 所在地 | 233 Kansas St., El Segundo, California 90245,USA |
| URL | http://www.irf.com/ |
IRLMS4502TR - IR の商品詳細ページです。