IRLIB9343PBF Ir

IRLIB9343PBF - IR の商品詳細ページです。

1
IRLIB9343PBF
  • IRLIB9343PBF
  • IRLIB9343PBF
  • IRLIB9343PBF
  • IRLIB9343PBF
  • IRLIB9343PBF
  • IRLIB9343PBF
  • no_image
  • no_image
  • no_image
  • no_image
2営業日以内に回答いたします

IRLIB9343PBF の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRLIB9343PBF
メーカーIR
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 190 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 14 A
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.105 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 33 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRLIB9343PBFのレビュー

IRLIB9343PBF のご注文について