IRLF120 Ir

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IRLF120 の詳細情報

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型番IRLF120
メーカーIR
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 5.3 A
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.35 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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