IRL530STRR データシート Ir

IRL530STRR - IR の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IRL530STRR の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRL530STRR
メーカーIR
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 5.2 A
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.16 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 88 W
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRL530STRRのレビュー

IRL530STRR のご注文について