IRHNJ597Z30 データシート Ir

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IRHNJ597Z30 の詳細情報

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型番IRHNJ597Z30
メーカーIR
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 152 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 22 A
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.07 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Reference Standard RH - 100K Rad(Si)
Sub Category Other Transistors
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 125 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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