IRHMS57264SE Ir

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IRHMS57264SE の詳細情報

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型番IRHMS57264SE
メーカーIR
Avalanche Energy Rating (Eas) 258 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (Abs) (ID) 37 A
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.061 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 148 A
Qualification Status Not Qualified
Reference Standard MIL-19500/685
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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