IRHM9160 Ir

IRHM9160 - IR の商品詳細ページです。

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IRHM9160 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRHM9160
メーカーIR
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 35 A
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.075 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 250 W
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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