IRGP50B60PD1 Ir

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IRGP50B60PD1 の詳細情報

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型番IRGP50B60PD1
メーカーIR
Additional Feature HIGH RELIABILITY
Case Connection COLLECTOR
Collector Current-Max (IC) 75 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 20 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W
Qualification Status Not Qualified
Rise Time-Max (tr) 20 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 161 ns
Turn-on Time-Nom (ton) 39 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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