IRGBC30FD2 データシート Ir

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IRGBC30FD2 の詳細情報

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型番IRGBC30FD2
メーカーIR
データシートProduct_list_pdf
Additional Feature FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 31 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5.5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 900 ns
Turn-on Time-Nom (ton) 145 ns
VCEsat-Max 2.1 V
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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