IRFSL11N50A データシート

Name: IRFSL11N50A
Brand: IR
SKU: 190001882-0000-0000-0000

IRFSL11N50A - IR の商品詳細ページです。

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IRFSL11N50A の詳細情報

型番	IRFSL11N50A
メーカー	IR
データシート
Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	390 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V
Drain Current-Max (Abs) (ID)	11 A
Drain Current-Max (ID)	11 A
Drain-source On Resistance-Max	0.55 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-262AA
JESD-30 Code	R-PSIP-T3
JESD-609 Code	e0
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	IN-LINE Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	190 W
Pulsed Drain Current-Max (IDM)	44 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON