IRFPC50 Ir

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IRFPC50 の詳細情報

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型番IRFPC50
メーカーIR
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 920 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.58 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 9.7 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 180 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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