IRFP22N50APBF Ir

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IRFP22N50APBF の詳細情報

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型番IRFP22N50APBF
メーカーIR
Avalanche Energy Rating (Eas) 1180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 22 A
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.23 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 27 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 277 W
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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