IRFN440 Ir

IRFN440 - IR の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IRFN440 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFN440
メーカーIR
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 700 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 6.1 A
Drain Current-Max (ID) 6.1 A
Drain-source On Resistance-Max 0.95 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Reference Standard MIL-19500/596
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 123 ns
Turn-on Time-Max (ton) 94 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRFN440のレビュー

IRFN440 のご注文について