IRFG6110 Ir

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IRFG6110 の詳細情報

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型番IRFG6110
メーカーIR
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 75 mJ
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 0.75 A
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.8 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-036AB
JESD-30 Code R-CDIP-T14
JESD-609 Code e0
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max 1.4 W
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 4 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 45 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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