IRFE9130 Ir

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IRFE9130 の詳細情報

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型番IRFE9130
メーカーIR
Additional Feature AVALANCHE ENERGY RATING
Avalanche Energy Rating (Eas) 92 mJ
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 6.1 A
Drain Current-Max (ID) 6.1 A
Drain-source On Resistance-Max 0.345 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
JESD-609 Code e0
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 22 W
Power Dissipation-Max (Abs) 22 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 280 ns
Turn-on Time-Max (ton) 200 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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