IRFE310 - IR の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

IRFE310 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFE310
メーカーIR
データシートProduct_list_pdf
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 0.82 mJ
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (Abs) (ID) 1.2 A
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 3.6 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
JESD-609 Code e0
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 11 W
Power Dissipation-Max (Abs) 11 W
Pulsed Drain Current-Max (IDM) 4.8 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 65 ns
Turn-on Time-Max (ton) 35 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRFE310のレビュー

IRFE310 のご注文について