IRFE210 データシート

Name: IRFE210
Brand: IR
SKU: 190038477-0000-0000-0000

IRFE210 - IR の商品詳細ページです。

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IRFE210 の詳細情報

型番	IRFE210
メーカー	IR
データシート
Additional Feature	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	20 mJ
Case Connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V
Drain Current-Max (Abs) (ID)	1.8 A
Drain Current-Max (ID)	1.8 A
Drain-source On Resistance-Max	1.725 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-CQCC-N15
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	15
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Shape	RECTANGULAR
Package Style	CHIP CARRIER Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	11 W
Power Dissipation-Max (Abs)	11 W
Pulsed Drain Current-Max (IDM)	9 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	GOLD
Terminal Form	NO LEAD
Terminal Position	QUAD
Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-off Time-Max (toff)	50 ns
Turn-on Time-Max (ton)	35 ns