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IRFE110 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFE110
メーカーIR
データシートProduct_list_pdf
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 7 mJ
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 3.1 A
Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 0.69 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
JESD-609 Code e0
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 11 W
Power Dissipation-Max (Abs) 11 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 45 ns
Turn-on Time-Max (ton) 40 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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