IRFD110 Ir

IRFD110 - IR の商品詳細ページです。

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IRFD110
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  • IRFD110
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IRFD110 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFD110
メーカーIR
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 1 A
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.54 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-250AA
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish PURE MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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