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IRFD024 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFD024
メーカーIR
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 91 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 2.5 A
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.1 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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