IRFD020 Ir

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IRFD020 の詳細情報

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型番IRFD020
メーカーIR
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (Abs) (ID) 2.4 A
Drain Current-Max (ID) 2.4 A
Drain-source On Resistance-Max 0.1 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-250AA
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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