IRFBL10N60A データシート Ir

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IRFBL10N60A の詳細情報

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型番IRFBL10N60A
メーカーIR
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 454 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.61 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-F2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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