IRFB23N20D データシート

Name: IRFB23N20D
Brand: IR
SKU: 190038410-0000-0000-0000

IRFB23N20D - IR の商品詳細ページです。

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IRFB23N20D の詳細情報

型番	IRFB23N20D
メーカー	IR
データシート
Avalanche Energy Rating (Eas)	250 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V
Drain Current-Max (Abs) (ID)	24 A
Drain Current-Max (ID)	24 A
Drain-source On Resistance-Max	0.1 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	65 pF
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 Cel
Operating Temperature-Min	-55 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	170 W
Pulsed Drain Current-Max (IDM)	96 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON