IRF9Z34N データシート Ir

IRF9Z34N - IR の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IRF9Z34N の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRF9Z34N
メーカーIR
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 17 A
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.1 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 56 W
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRF9Z34Nのレビュー

IRF9Z34N のご注文について