型番 | IRF7379PBF. |
---|---|
メーカー | IR |
データシート | ![]() |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 5.8 A |
Drain Current-Max (ID) | 5.8 A |
Drain-source On Resistance-Max | 0.045 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MS-012AA |
JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W |
Pulsed Drain Current-Max (IDM) | 46 A |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | International Rectifier |
---|---|
設立 | 1947 |
所在地 | 233 Kansas St., El Segundo, California 90245,USA |
URL | http://www.irf.com/ |
IRF7379PBF. - IR の商品詳細ページです。