IRF7317 Ir

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IRF7317 の詳細情報

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型番IRF7317
メーカーIR
Additional Feature AVALANCHE RATED
Application SWITCHING
Avalanche Energy Rating (Eas) 100 mJ
Avalanche Energy Rating (Eas) (mJ) 100
Configuration N and P-Channel
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 20 V
DS Breakdown Voltage-Min (V) 20
Drain Current-Max (Abs) (ID) 5.3 A
Drain Current-Max (ID) 6.6 A
Drain Current-Max (ID) (A) 6.6
Drain-source On Resistance-Max 0.029 ohm
Drain-source On Resistance-Max (ohm) 0.029
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e0
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation Ambient-Max (W) 2
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 26 A
Pulsed Drain Current-Max (IDM) (A) 26
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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