IRF6665TR1PBF Ir

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IRF6665TR1PBF の詳細情報

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型番IRF6665TR1PBF
メーカーIR
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 11 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 19 A
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.062 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N2
JESD-609 Code e4
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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